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Recent Developments in Group II-VI Based Chalcogenides and Their Potential Application in Solar Cells
Published in Ram K. Gupta, 2D Nanomaterials, 2022
Saif Ali, Faheem K. Butt, Junaid Ahmad, Zia Ur Rehman, Sami Ullah, Mashal Firdous, Sajid Ur Rehman, Zeeshan Tariq
Electrochemical synthesis is a simple and economical method to synthesize the II-VI-based chalcogenides for large-scale production at low temperatures. The architecture of nanomaterials can be tailored by this synthesis technique. This is the most suitable synthesis technique to prepare high-quality heterojunction solar cells. Chen-Zhong Yao et al. studied the vertical and high-density core–shell ZnO/CdS nanorods that were prepared by a two-step electrochemical deposition process. The prepared sample was used in QD-sensitized solar cells and showed improved performance. They reported 1.07% of PCE with Jsc of 5.43 mA cm−2 [30].
Synthesis and Applications of MOFsChalcogenide-based Nanocomposites
Published in Ram K. Gupta, Tahir Rasheed, Tuan Anh Nguyen, Muhammad Bilal, Metal-Organic Frameworks-Based Hybrid Materials for Environmental Sensing and Monitoring, 2022
Shikha Bhogal, Irshad Mohiuddin, Sandeep Kumar, Promila Sharma, Asnake Lealem Berhanu, Kuldeep Kaur, Ashok Kumar Malik
MOFs have also been used as precursors/templates for the synthesis of metal chalcogenides for a few years [9]. The porous structure of MOFs and the presence of abundant metal ions make them favorable candidates for the derivation of metal chalcogenides. The MOF-derived metal chalcogenides retain the high surface area and permanent porosity of MOFs while significantly enhancing their conductivity and stability [10]. The outstanding features of derived metal chalcogenides make them promising candidates for electrochemical applications. Considering the promising aspects of metal-organic frameworks modified metal chalcogenide (MOFs@MC) nanocomposites, this chapter discusses the different methods for their synthesis along with their electrocatalytic applications. In addition to this, the electrochemical application of MOF derived metal chalcogenides has also been explored. Finally, the prospects of MOFs-chalcogenide nanocomposites for future applications have been explored.
Nanostructure Thin Films: Synthesis and Different Applications
Published in Vineet Kumar, Praveen Guleria, Nandita Dasgupta, Shivendu Ranjan, Functionalized Nanomaterials I, 2020
Ho Soon Min, Debabrata Saha, J.M. Kalita, M.P. Sarma, Ayan Mukherjee, Benjamin Ezekoye, Veronica A. Ezekoye, Ashok Kumar Sharma, Manesh A. Yewale, Ayaz Baayramov, Trilok Kumar Pathak
Thin films of metal chalcogenides have good chemical, physical, optical, and electrical properties [Atan et al., 2010]. As a result, these materials could be used for a variety of applications including photo degradation, gas sensing, energy conversion, energy storage, and field-effect transistors. Several methods exist, such as the chemical method [Teo et al., 2010], and physical techniques have been developed to produce these films. Researchers found that each deposition technique has both advantages and disadvantages.
Synthesis and characterization of ZnSe1-xTex thin films
Published in Phase Transitions, 2021
Brijesh Kumar Yadav, Pratima Singh, Chandreshvar Prasad Yadav, Dharmendra Kumar Pandey
Chalcogenide thin films are attracted considerable in the field of scientific research like optical communication, laser power delivery, optoelectronic devices, etc. due to having nobel properties such as wide band gap and high chemical thermal stability [1, 2]. The semiconducting thin films of II-VI group compounds play a significant role in optoelectronic devices such as blue–green light emitting diodes, light detecting devices, photovoltaic conversion, IR lasers, thin film transistors, etc due to having a wide band gap [3–6]. The binary compounds RX (R = Cu, Zn, Cd, Ga, Ge; X = S, Se, Te) are quite important semiconducting chalcogenide compounds whose structural, morphological, optical, electrical, and dielectric characterizations are reported elsewhere [7–15]. These materials comprise a wide band gap and have applications in several semiconducting fields. The doping of the third component in these binary semiconducting chalcogenide compounds changes their inherent properties. The study of structural, morphological, electrical, and optical properties of few ternary semiconducting chalcogenide compounds like CdZnSe, AgInSe, ZnSeTe, GaSeAs, SnGeS, BaSSe, BaSTe, and their thin films have reported in the literature [16–21]. The thin film of zinc selenium telluride is also reported to be useful in optical waveguide and cladding layers to enhance the optical confinement of light waves [18].
Electrical and optical properties of Sb-doped Cu2Se thin films deposited by chemical bath deposition
Published in Phase Transitions, 2020
J. Henry, T. Daniel, V. Balasubramanian, K. Mohanraj, G. Sivakumar
In recent years the transition-metal chalcogenides have gained tremendous interest due to their potential application in solar cell, thermoelectric power converter, optical filters, etc [1–4]. CdS and CdTe are mostly used for solar cell applications and optical devices and show higher efficiency; however, the toxicity of these material limits their use in practical and industrial uses. During the past decades, copper selenide (Cu2Se) has attained a major role in photovoltaic applications [2,3] due to its wide band gap ranging from 1.2 to 2.3 eV [1,3]. Cu2Se is a p-type semiconductor. Govindraju et al., [5] employed Cu2Se nanoparticles in hybrid solarcells and obtained 1.02% photoconversion efficiency (PCE) [5]. Eskandari and Ahmadi [6] used Cu2Se as a counter electrode for quantum dot-sensitized solar cells (QDSSCs) and obtained 2.28% PCE [6]. The obtained efficiency is very low for commercial application; hence it is necessary to improve it. This can be done by tuning the optical properties of the Cu2Se by doping.
Compositional dependence of physical parameters of Sb-doped InSe nanochalcogenide alloys
Published in Phase Transitions, 2023
Diksha Thakur, Vir Singh Rangra
Chalcogenide glasses have bandgap similar to that of semiconductors and are called amorphous semiconductors. Undoped chalcogenides have low electrical conductivity, which can be a limitation to their technological applications. One of the important methods to alter and enhance the properties of these semiconducting glasses is the introduction of impurities in the glassy matrix [12]. It has been observed that by adding metallic additives physical, electrical and optical properties of these materials could change drastically. So, it is possible to modify the properties of chalcogenide alloys by varying their chemical compositions for some specific technological application and is worth experimenting [13]. Out of all chalcogens amorphous Se is found to be of great importance, due to its device applications such as photocells, rectifiers, xerography, etc. and the majority of its applications are based on energy storage. Se in its pure state is a mix of long polymeric Sen chains and Se8 rings [11,14]. Owing to their favorable thermo-mechanical characteristics, selenium-based chalcogenide glasses exhibit exceptional infrared transmission in the 2–15 μm range. These amorphous glasses can easily be formed into optical devices, such as optical fibers and lenses [11]. In general, chalcogenides having a higher % of Se show good electrical conduction and are good converters of light energy into electrical energy (photoelectric effect) [15]. Amorphous Se is a good glass former but it has many disadvantages such as a short lifetime, low thermal stability and low sensitivity. To enhance the use of Se many workers have made their efforts by alloying Se with metallic additives such as In, Sb, Ge, As, Te, etc. to enhance the sensitivity and crystalline temperature and to reduce the aging effects [15–19].