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2Si epitaxy on (100) silicon by the predeposition of monolayer thin reactive metal films
Published in A G Cullis, P D Augustus, Microscopy of Semiconducting Materials, 1987, 2021
J T McGinn, D M Hoffman, J H Thomas, F J Tams
Silicide films have been used extensively in the semiconductor industry as contacts and interconnects. Epitaxial silicides have been shown to have a number of advantages over polycrystalline silicides. Among these advantages are (1) lower resistance and higher mobility; (2)improvements in Schottky barrier uniformity; (3) reduction of junction shorting and dopant redistribution upon formation of contacts to shallow junction devices; (4) the ability to support the formation of epitaxial silicon/silicide/silicon structures for three dimensional vertical integration. The best quality epitaxial silicide films, as determined by Rutherford back-scattering (RBS), have been prepared under ultra high vacuum (UHV) conditions on atomically clean substrates. The necessity for UHV conditions and clean substrates has limited the introduction of these materials into routine device fabrication. Hoffman has previously reported upon a technique by which thin (3–5 nm) epitaxial films were grown in a conventional vacuum system (10−7 Torr) using ultra thin titanium layers to modify the surfaces of silicon wafers. Dramatic improvements in epitaxial quality and thickness uniformity were described over the single reported case of Pd2Si epitaxy on.(100) silicon by Vaidya and Murarka. This paper extends that work by examining: (1) the influence of the predeposition of tungsten, vanadium, and chromium upon the epitaxy of Pd2Si; (2) the epitaxial relation of thick (100 nm) Pd2Si films on (100) silicon.
Electron-beam annealing of Co and Cr implanted polycrystalline silicon
Published in A G Cullis, S M Davidson, G R Booker, Microscopy of Semiconducting Materials, 1983, 2020
A low resistivity film may be formed by combining the poly-Si with a metal to create a silicide (Murarka 1980). Silicides are particularly attractive in integrated circuit technology because of this low resistivity and also because of their high temperature stability. The choice of metal largely depends on the properties of the resulting thin film silicide as regards physical and chemical compatability with the device fabrication process.
CMOS Circuits
Published in Michael Olorunfunmi Kolawole, Electronics, 2020
From the design perspective, we deal with wire resistance RW by selective technology scaling, and/or use better interconnect materials such as silicides with better conductivity properties than polysilicon, e.g. Tungsten silicide (WSi2), Titanium silicide (TiSi2), Tantalum silicide (TaSi2), Platinum silicide (PtSi2), Nickel silicide (NiSi), and Cobalt silicide (CoSi). These silicides result from metal deposition on silicon Si and formation by thermal heating, laser irradiation, or ion beam mixing with the hope of having low resistance but at high thermal budget. Other properties of silicides include good process compatibility with Silicon (Si); e.g. ability to withstand high temperatures, oxidizing ambience, various chemical cleans used during processing, little or no electromigration, easy to dry etch, and good contacts to other materials. Also critical is having sufficiently low diffusivity in silicon in order to prevent the metals from diffusing into the silicon p-n junction depletion regions and/or to the gate oxides. Two types of silicide processes are currently used: polycide—a method of patterning the silicide on the polysilicon gate electrode, and silicide—a method of self-aligning a silicide layer to all exposed silicon regions.
Substitutional and interstitial impurity p-type doping of thermoelectric Mg2Si: a theoretical study
Published in Science and Technology of Advanced Materials, 2019
Naomi Hirayama, Tsutomu Iida, Mariko Sakamoto, Keishi Nishio, Noriaki Hamada
Thermoelectric silicide materials have attracted considerable attention over the last decade because of their potential applicability in renewable and sustainable energy technologies. Magnesium silicide (Mg2Si) [1–3], a narrow-gap semiconductor with anti-fluorite crystal structure, is a promising candidate for mid-temperature (600–900 K) thermoelectric applications, owing to its non-toxicity, low production cost, and low weight. However, significant improvement of the thermoelectric conversion efficiency of Mg2Si is required for its successful commercialization.
Effect of initial composition on phase selection in Ni–Si powder blends processed by mechanical alloying
Published in Materials and Manufacturing Processes, 2018
C. Suryanarayana, Ahmed A. Al-Joubori
Metal silicides in general, and nickel silicides in particular, are used in modern electronic device technology.[1,2] They are generally synthesized by solid-state reaction of metal and Si at temperatures below their eutectic temperatures and subsequent furnace annealing or rapid thermal annealing [see, e.g., Ref.[3,4]]. However, most of these silicides are line compounds, i.e., have narrow composition ranges and high melting points, and therefore achievement of correct stoichiometry for synthesis of these intermetallic compounds by conventional methods is difficult. The technique of mechanical alloying (MA) has been found to be extremely useful for mass production of such powders, especially in the synthesis of sputtering targets. MA is a non-equilibrium solid-state powder processing method which involves repeated cold welding, fracturing, and rewelding of powder particles in a high-energy ball mill. As a consequence, the powder particles experience severe plastic deformation resulting in grain refinement, accumulation of crystal defects and a slight rise of powder temperature. Due to these combined effects, homogenous materials can be synthesized starting from blended elemental powder mixtures.[5,6] A variety of stable and metastable phases including solid solutions, intermetallic phases, nanocrystalline alloys, composites, and amorphous alloys have been synthesized using the MA technique.[567891011121314151617181920212223242526]