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Bricks and Mortar: Micro/Nanoelectronics Fabrication
Published in John D. Cressler, Silicon Earth, 2017
We might even choose to dope the polysilicon as we deposit it [e.g., n-type using phosphine (PH3)—nasty stuff that supposedly smells like almonds, but so wickedly toxic you have to wonder how anyone actually knows what it smells like and lived to tell!]. Alas, silane is extremely explosive (and toxic). If you happen to ever visit a real fabrication facility you will note that the 50 ft tall, large white silane cylinders are conveniently removed a few hundred feet from the main building and placed in what are affectionately known as “bunkers”—you get the idea! Exceptionally sensitive gas detectors and all sorts of safety measures for things like silane and phosphine handling are a dime-a-dozen in the fab, for obvious reasons (okay, $100,000 a dozen!). Polysilicon is very commonly used in fabrication when we do not need a perfect silicon crystal, but still require a doped silicon layer to serve as a good conductor, and it can be put down directly on oxide, for instance, to isolate it electrically from the silicon crystal.
Process Development
Published in Michael G. Pecht, Riko Radojcic, Gopal Rao, Guidebook for Managing Silicon Chip Reliability, 2017
Michael G. Pecht, Riko Radojcic, Gopal Rao
Silane chemistry is adequate for technologies above 1 μm. For submicron technologies this technique of ILD deposition may not be adequate if used by itself. Silane chemistry adapted for submicron technologies by using a multilayered dielectric layer in combination with spin-on-glass (SOG) has been used quite successfully [Yen and Rao 1988]. A thin layer of oxide deposition followed by SOG can be used either in an etchback or a nonetchback mode. Details on SOG planarization are given in the appropriate section. Such a dielectric stack allows sufficiently thin oxide film to be deposited so the problem of void formation is eliminated. Gap fill is achieved by the SOG film. From a safety point of view, silane gas delivery and exhaust management is very important as silane is very flammable.
Metal Matrix, Ceramic Matrix, and Carbon/Carbon Composites
Published in Manoj Kumar Buragohain, Composite Structures, 2017
The commonly used precursors include polymers containing various types of silane. (Silane is an inorganic compound containing one silicon atom and four hydrogen atoms, i.e., SiH4.) These polymers are produced by dechlorination of chlorinated silane monomers that are easily available as by-products in the silicone industry. Typically, pyrolysis of the cured precursor polymer leads to the crystalline precipitation of ceramics such as SiC, Si3N4, and SiO2 and evolution of gases such as SiO and CO.
Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization
Published in Journal of Asian Ceramic Societies, 2019
Rong Tu, Zhiying Hu, Qingfang Xu, Lin Li, Meijun Yang, Qizhong Li, Ji Shi, Haiwen Li, Song Zhang, Lianmeng Zhang, Takashi Goto, Hitoshi Ohmori, Marina Kosinova, Bikramjit Basu
A wide bandgap semiconductor, e.g., cubic 3C-SiC [1,2] has been demonstrated to be a reliable substrate on which to grow high-quality graphene [3]. Growth of 3C-SiC epitaxial film on a Si single crystalline substrate has attracted much attention in recent decades due to the low temperature, low cost and large area growth of the process [4]. 3C-SiC(111) epitaxial thin films have usually been grown on Si by the chemical vapor deposition (CVD) method using carbon (CH4 or C3H8) and silicon (SiH4 or SiCl4) precursors in a hydrogen flow. Due to its self-ignitability, flammability and toxicity, however, the use of silane gas sources requires strict safety controls [5–7]. To date, 3C-SiC epitaxial films have been grown by carbonization via the thermal CVD and molecular beam epitaxy (MBE) methods [8,9]; however, in growth rates were less than 0.1 μm/h, which is insufficient for industrial applications [10].
Expansion inhibition of steel slag in asphalt mixture by a surface water isolation structure
Published in Road Materials and Pavement Design, 2020
Lili Ma, Dingbin Xu, Shengyue Wang, Xingyu Gu
The model of silane coupling agent in this research was KH-550, whose technical indicators were seen in Table 3. The general chemical structure of silane coupling agent is R(4−n)-Si-(R′X)n (n = 1,2), where R is alkoxy, X is organofunctionality and R′ is an alkyl bridge connecting silicon atom and organofunctionality (Xie, Hill, Xiao, Militz, & Mai, 2010). R interacts with organic matter and X with inorganic matter, thus building firm adhesion between organic and inorganic matters.
Mathematical modeling of the detonation wave structure in the silane-air mixture
Published in Combustion Science and Technology, 2018
A.V. Fedorov, D.A. Tropin, P.A. Fomin
Silane (silicon tetrahydride) is widely used in semiconductor and photoelectric industries as a source of silicon. Silane is a self-igniting gas, which ignites due to its contact with air even under standard conditions. For this reason, it is rather hazardous in terms of fire. Attention of many researchers is riveted to modeling chemical transformations of silane, in particular, because of various issues associated with explosion and fire safety. In this paper, calculations of parameters and detonation wave (DW) structure on the basis of detailed and reduced chemical kinetics will be made.