China 
Africa 
Explore chapters and articles related to this topic
Design and Analysis of Transition Metal Dichalcogenide-Based Feedback Transistor
Published in Ashish Raman, Deep Shekhar, Naveen Kumar, Sub-Micron Semiconductor Devices, 2022
Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta, Naveen Kumar
TMDC materials are found in the form MX2, where M represents transition metals like molybdenum, tungsten, and so forth, and X denotes chalcogens like sulfur, selenium, etc. Most common TMDC materials are molybdenum disulfide (MoS2), tungsten disulfide (WS2), molybdenum ditelluride (MoTe2), molybdenum diselenide (MoSe2), and tungsten diselenide (WSe2). TMDCs are extremely promising for nanoscale devices as a single layer of TMDC materials is only 6.5 Å thick. In TMDC materials, each atom is bound to each other by the van der Waals force. TMDC materials can be fabricated using different techniques, the most common of which are exfoliation, chemical vapor deposition, and molecular beam epitaxy. These materials have a direct bandgap in a few-layered configuration, which make them suitable even for optoelectronic applications. In the work “2D Transition Metal Dichalcogenides,” Manzeli et al. thoroughly reviewed TMDC materials and put the limelight on spin orbiting and the behavior of material under high-frequency applications [25]. Although there are transistors designed using TMDC materials, most of them suffer from a poor ION/IOFF ratio because of poor mobility of charge carriers of TMDC materials.
Generation of four-wave mixing in molybdenum ditelluride (MoTe2)-deposited side-polished fibre
Published in Journal of Modern Optics, 2021
H. Ahmad, M. K. A. Zaini, A. A. Kamely, M. Z. Samion, M. F. Ismail, K. S. Lim, A. K. Zamzuri, K. Thambiratnam
Of the various 2D materials reported, transition metal dichalcogenides (TMDs) were amongst the new classes of 2D materials that have attracted significant interest due to their excellent physical and chemical properties, as well as having a unique dimensionality effect [16–18]. As a member of the TMD family, molybdenum ditelluride (MoTe2) has received considerable attention due to its cost-effectiveness, high chemical stability, tailorable bandgap, and high conductivity [19]. The structure of MoTe2 consists of two layers of chalcogen atoms and a hexagonal layer of transition metal [20]. Unlike graphene, which has a zero bandgap, the properties of TMDs rely on their number of layers [21]. For instance, a bulk MoS2 is an indirect semiconductor whereas its monolayer form is a direct semiconductor, each having bandgaps of 1.2 and 1.9 eV respectively [22]. When the electronic properties of TMDs are altered, for instance by replacing the sulfur (S) atom with a tellurite (Te) atom, the bandgap of TMDs decreases. These made MoTe2 a more desirable material for certain opto-electronics applications compared to the other TMD materials due to its smaller bandgap [23–25]. The potential of MoTe2 in nonlinear optical systems, however, is still at an early stage, and it is of interest to investigate the nonlinear effect in MoTe2-based devices.