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A Review of the Theoretical Results Associated with the Intermediate Bandgap Solar Cell Materials
Published in Amit Soni, Dharmendra Tripathi, Jagrati Sahariya, Kamal Nayan Sharma, Energy Conversion and Green Energy Storage, 2023
Aditi Gaur, Karina Khan, Amit Soni, Jagrati Sahariya, Alpa Dashora
Copper indium selenide thin film and copper gallium selenide thin film with doping of sodium form copper indium selenide and copper indium gallium diselenide thin-film photovoltaic cells [5,7]. These are direct bandgap photovoltaic cells, which are comparatively low-cost photovoltaic cells, and environment friendly as cadmium-based cells are not eco-friendly. These cells exhibit good efficiency (21.6%) and can work if the temperature increases [5].
The influence of Copper Indium Selenide and related chalcopyrite solar cell materials on the behaviour of cell populations in vitro in comparison with the elements Copper, Indium, Gallium, Selenium, and Sulfur
Published in R D Tomlinson, A E Hill, R D Pilkington, Ternary and Multinary Compounds, 2020
C. Beilharz, K. W. Benz, G. Neupert, D. Welker
Copper Indium Selenide (CISe) is one of the most promising materials for thin film solar cells [1], Solid solutions containing Ga and S besides Cu, In and Se lead to an even higher efficiency of the energy conversion [2,3,4],
Electrodeposition of Ternary Semiconductors
Published in R.K. Pandey, S.N. Sahu, S.N. Sahu, S. Chandra, Handrook Of Semiconductor Electrodeposition, 2017
R.K. Pandey, S.N. Sahu, S.N. Sahu, S. Chandra
Copper indium selenide is a leading candidate material for low-cost terrestrial photovoltaic power generation. CuInSe2/CdS photovoltaic heterojunctions have crossed the 10% efficiency barrier. Small-area devices with 14.8% efficiency (Stolt et al. 1992) and 4 ft2 modules with 9.7% active area efficiency (Ermer et al. 1993) have been reported. Polycrystalline copper indium selenide exhibits a complex defect chemistry, and the presence of secondary phases surrounding the grains or segregated to the surface has often been observed. For example, Cu-rich CuInSe2 produces the best CuInSe2/CdS photovoltaic device performances provided the formation of a second phase of CuxSe is avoided. The coexistence of CuInSe2 and InxSe has also been detected (Rockett et al. 1994; Cahen and Noufi 1992; Varrin et al. 1990). Preparation of device quality single-phase CuInSe2, therefore, requires considerable skill. Electron beam muhisource thermal evaporation or flash evaporation has commonly been used to grow thin CuInSe2 films. Electrodeposition work has mainly been hindered by the wide difference between the deposition potentials of copper (0.1 V vs SCE) and indium (—0.58 V vs SCE) in aqueous media. It is therefore very difficult to control the stoichiometry of Cu/In. The electrodeposition of CuInSe2 has been approached using the following alternatives: Direct codeposition of CuInSe2 from an aqueous bathPlating an alloy layer of Cu-In and giving it a selenization treatment in H2SeSelenization of stacked Cu and In layersElectrodeposition of Cu2Se and In2Se3 layers followed by annealingElectrodeposition of Cu, In, and Se layers followed by heat treatmentElectrodeposition of Cu-In alloy and Se layers and heat treatmentRapid thermal annealing of electrodeposited Cu-In alloy and vacuum-evaporated Se layers
Electronic and optoelectronic applications of solution-processed two-dimensional materials
Published in Science and Technology of Advanced Materials, 2019
Many photodetectors using 2D materials have been reported and studied. Among them, photodetector by solution-processed 2D materials is a small but promising area. Though liquid-exfoliated 2D materials have not yet been widely employed to fabricate optoelectronic devices because of their relatively poor quality, there are still more and more studies showing their great potential for photoelectronic devices because of their low cost and easy fabrication features. In addition, large efforts have already been made to improve the quality of liquid-exfoliated 2D materials. Through inkjet printing, MoS2 dispersion is directly written to form the uniform patterns with high quality (5–7 nm thick) [85]. When the device made by this MoS2 dispersion is illustrated by different lights (infrared, white and UV lights), it shows a very rapid photo response which the device current (at Vg = 0 V and Vd = 1 V) swiftly jumps upwards/downwards and then returns toward the dark current following each On/Off switch. Cunningham et al. reported a thin-film photodetector formed by solution-exfoliated MoS2 nano-platelets. The photoresponsivity was about 0.1 mAW−1 [86]. Frisenda et al. developed a dielectrophoretic assembly method to assemble TiS3 nanosheets and fabricated TiS3-based photodetector, with a photoresponsivity of 3.8 mA W−1 [87]. Layered indium selenide (InSe) as another kind of 2D material presents many unique properties towards high-performance electronic and optoelectronic device applications. In 2018, Kang et al. employed individual InSe nanosheets in photodetectors [88]. The InSe nanosheets were exfoliated by a surfactant-free, low boiling point, deoxygenated co-solvent system, and they were stabilized by a mixture of ethanol and water (Figure 5(a)). Thus, the product exhibited minimal processing residues and was chemically and structurally pristine, indicating its high-quality compared with the product from traditional surfactant-assisted liquid exfoliation methods. The photodetector fabricated by individual InSe nanosheet exhibited a maximum photoresponsivity of about 5 × 107 A W−1, which was almost the highest value among any solution-processed photodetectors to date as shown in Figure 5(b). In addition to individual nanosheet devices, the InSe thin-film photodetectors (Figure 5(c)) fabricated by vacuum filtration demonstrated sublinear dependence of photocurrent (Ipc) and a maximum photoresponsivity of about 10 AW−1 (Figure 5(c)), which was higher than the previously reported thin-film photodetectors from solution-processed 2D materials and some from CVD growth 2D materials [86,87,89]. Beyond the works where solution-processed 2D materials were directly used to build photodetectors, 2D materials can also act as decorators. A sensitive and fast monolayer WS2 photodetector decorated by liquid-exfoliated SnS nanosheets was fabricated by Jia et al. [90]. The results showed that photoresponsivity of WS2 photodetector had been significantly enhanced to 2 A W−1 and the response range had been enlarged, after being decorated by liquid-phase exfoliated SnS nanosheets.