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Analysis of Multijunction Solar Cell-Based PV System with MPPT Schemes
Published in Bhavnesh Kumar, Bhanu Pratap, Vivek Shrivastava, Artificial Intelligence for Solar Photovoltaic Systems, 2023
The cells which have various p–n intersections made of distinct semiconductor materials constitute the MJSC. In response to distinct light wavelengths, each p–n intersection will generate electricity [4]. The utilization of numerous semiconducting materials permits the absorbance of a more extensive scope of wavelengths improving the cell’s daylight to electrical vitality change effectiveness. In this work, the semiconductor materials that are used as various subcells are InGaP, indium gallium arsenide (InGaAs), Si, and Ge. However, these subcells are placed in the decreasing order of bandgap energy. This is the basic way for the implementation of MJSCs. Various other semiconductor materials can be used too in the process of making this type of highly advanced cell. Various materials in the MJSC are stacked with tunnel intersections and are likewise furnished with window layers. The tunnel intersection takes care of the issue of interfacing diverse cells although the window layer handles the cross-section consistently. The four-layer MJSC is presented in Figure 6.1.
Bandgap tailoring and optical response of InAlAs/InGaAs/GaAsSb double quantum well heterostructures: the impact of uniaxial strain and well width variations
Published in Journal of Modern Optics, 2022
Md. Riyaj, Amit Rathi, A. K. Singh, P. A. Alvi
where C12 and C11 are elastic stiffness constants and represents Poisson’s ratio. The bandgap of a lattice-matched (unstrained) In1-yGayAs at room temperature is given by For a strained Indium gallium arsenide (In1-yGayAs) layer, the conduction band is modified by where is the conduction band deformation potential and valence sub-bands edge are shifted by where (eV) indicates the valence band deformation potential and b (eV) represents the shear deformation potential and
Nanowire Transistors: A Next Step for the Low-Power Digital Technology
Published in IETE Journal of Research, 2021
D. Ajitha, K. N. V. S. Vijaya Lakshmi, K. Bhagya Lakshmi
Initially, the bottom-up approach of nano-scale building blocks yielding to the construction of nanowire structures paved the way to the different NWs [3]. In the recent research, to make the transistor, the solution that contains a small bunch of Nanowires that are under the control of the same gate and functions as a single efficient transistor [4]. Researchers at Japan Science and Technology and Hokkaido University Agency reports that a gate all-around (GAA) transistor contains ten vertical Indium Gallium Arsenide Nanowires placed on a substrate of silicon [5]. The two researchers Guilhem Larrieu and X-L. Han working in the laboratory for Architecture and Analysis of Systems [6]. Lille reported a scale-down process to create a Nanowire transistor consisting of an array of 225 doped silicon Nanowires, each 30 nm width and 200 nm length that vertically joins the two contact terminals from the source and drain of the transistor [4]. The 14 nm-thick chromium layer around the Nanowire increases its length.
Terahertz generation and detection of 1550-nm-excited LT-GaAs photoconductive antennas
Published in Journal of Modern Optics, 2021
Zhi-Chen Bai, Xin Liu, Jing Ding, Hai-Lin Cui, Bo Su, Cun-Lin Zhang
Among typical THz spectroscopy, terahertz time-domain spectroscopy (THz-TDS) is a very effective coherent detection technology [5]. THz wave generation and detection is a crucial technology. Presently, THz waves are mainly generated via optical rectification and photoconductive antennas. Optical rectification generates a low-frequency polarization field through the interaction between a pulsed laser and a non-linear medium to radiate THz. Optical rectification-generated THz waves are related to pulsed lasers and non-linear media [6]. Under the action of an ultrafast laser pulse and a bias electric field, photoconductive materials produce carriers, which accelerate and radiate THz waves. These THz waves are related to the photoconductive material, antenna structure, and ultrafast laser pulse width [7]. Photoconductive antenna-generated THz waves are usually stronger than optical rectification-generated ones because the THz energy generated via optical rectification only comes from the incident laser. In contrast, photoconductive antenna-generated THz waves are also related to the incident laser but can be adjusted by setting a bias voltage. With the development of semiconductor technology, photoconductive antennas [8,9] have attracted increased attention. Currently, gallium arsenide (GaAs), indium gallium arsenide (InGaAs), and indium aluminium arsenide (InAlAs) [10,11] are the main materials used in THz wave generation and detection research.