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1-xSb heterostructures
Published in A G Cullis, J L Hutchison, Microscopy of Semiconducting Materials 2001, 2018
B Jahnen, M Luysberg, K Urban, H Bracht, R Schmidt, C Ungermanns, T Bleuel
The demand for optoelectronic devices for the infrared range can be met by semiconductor heterostructures based on group-III antimonides, a low-eV, low-misfit material system (Dutta 1987). Of all III-V compound semiconductor materials, the antimonides offer the smallest band gaps, from 0.6 eV of GaSb down to 0.2 eV of InSb. Therefore, devices based on GaSb/AlSb heterostructures are well-suited as emitters for optical data transmission. In addition, similar to the GaAs/AlAs system, GaSb and AlSb offer a prerequisite for high-quality heteroepitaxial growth in that their lattice parameters differ by less than 0.7 %, allowing growth of pseudomorphically strained layers without plastic relaxation.
μm wavelength range
Published in J Kono, J Léotin, Narrow Gap Semiconductors, 2006
R Teissier, D Barate, J. Devenson, A.N. Baranov, X. Marcadet, C. Renard, C. Sirtori
Antimonide compound semiconductors are the family of III-V materials with a crystal lattice constant of about 6.1 Å (Fig.2), that can be grown lattice matched on gallium antimonide (GaSb) or indium arsenide (InAs) substrates. This family includes the three binary compounds InAs, GaSb, AlSb and their alloys.
Scanning inductive pulse phase thermography with changing scanning speed for non-destructive testing
Published in Quantitative InfraRed Thermography Journal, 2023
C. Tuschl, B. Oswald-Tranta, T. Agathocleous, S. Eck
Two test rigs with different inductor types are used for the measurements presented in this paper. In both cases the infrared camera IRCam VELOX 1310k SM was used for recording the image sequences. This cooled quantum detector camera with an Indium Antimonide semiconductor material has a frame rate of 180 Hz at full frame. However, measurements in this work were performed in binning mode, which reduces the resolution and allows frame rates up to 594 Hz [10]. Measurements with an uncooled µ-bolometer camera (FLIR A615) were also carried out for the detection of surface defects. The goal was to investigate if this method is also suited for uncooled µ-bolometer cameras, because they are cheaper, smaller in size, more robust and therefore better suited for some mobile applications. Table 1 presents a comparison of both used cameras and the used settings, like spectral range, frame rate, noise equivalent temperature difference (NETD) and integration time (IT) and thermal time constant (TC), respectively.
NDT inspection of aeronautical components by projected thermal diffusivity analysis
Published in Quantitative InfraRed Thermography Journal, 2021
P. Venegas, J. Perán, R. Usamentiaga, I. Sáez De Ocáriz
Real aeronautical components have been inspected by IRT NDT and analysed with the PTD method as a next step in the development process of the algorithm. Optical step heating thermographic inspections in reflection mode were conducted at the laboratory using two halogen lamps of 1000 W at 80% capacity (Figure 6). The lamps illuminated the specimens for 10 s so the temperature increase and decay were recorded for 10 s each stage, making a total of 20 s for the whole inspection. Infrared images were acquired using a FLIR SC5500 model camera. This camera is equipped with a cooled Indium antimonide detector that operates in the 2.5–5.1 mm waveband with 20 mK of thermal sensitivity. The spatial resolution of the camera is 320256 pixels and, although the camera has a maximum frame rate of 383 Hz at full-frame, the experiments were recorded at 50 Hz to reduce the size of acquired videos. All the specimens were inspected at their external surface, the so-called aerodynamic surface, that is the accessible area for inspecting in normal operation conditions.
Suitability of lock-in infrared thermography for luminescent glass development
Published in Quantitative InfraRed Thermography Journal, 2020
Peter W. Nolte, Nils Ziegeler, A. Charlotte Rimbach, Stefan Schweizer
The thermal diffusivity of the samples is measured using a lock-in thermography setup. The setup consists of an infrared camera (InfraTec ImageIR 8380S), a modulated 980-nm laser diode (Thorlabs L980P100) with an (optical) output power of 100 mW for periodic optical heating with rectangular lases pulses, and a controller to synchronise image acquisition and heating. The infrared camera uses an indium antimonide (InSb) focal plane array (FPA) snapshot detector with a geometric resolution of 640 × 512 px. The spectral range for detection is between 2.0 µm and 5.7 µm. The noise equivalent temperature difference (NETD) is less than 25 mK. The samples are placed into a vacuum chamber to avoid heat losses by convection, as depicted in Figure 1. The vacuum chamber is equipped with a sapphire glass window (typically over 80% transmittance in the spectral range between 2 µm and 4 µm) and a borosilicate glass window (typically over 90% transmittance in the visible and the near-infrared spectral range). For the measurements, the vacuum chamber is evacuated to pressures below 10 mbar. All Samples are painted black (Electrolube Black Matt Paint, emissivity close to 1.0) on both sides to maximise the optical absorption of the laser and to ensure a high and uniform emissivity of the surface facing the camera.