China
Africa
Explore chapters and articles related to this topic
Electronic Components
Published in Michael Pecht, Handbook of Electronic Package Design, 2018
Denise Burkus Harris, Michael Pecht, Pradeep Lall
Trichlorosilane (SiHCl3) is a liquid at room temperature and is purified to required standards by fractionation. Once trichlorosilane is purified, it is reduced in hydrogen at high temperature to form polycrystalline silicon. The reduction reaction that takes place is SiHCl3+H2→heatSi+3HCl
Integrated circuits
Published in Stephen Sangwine, Electronic Components and Technology, 2018
Trichlorosilane is a colourless liquid with a boiling point of 33°C at a pressure of 758 mm of mercury. The distillation is carried out at reduced pressure because trichlorosilane is unstable and cannot be distilled at atmospheric pressure.
Slag refining of silicon and silicon alloys: a review
Published in Mineral Processing and Extractive Metallurgy Review, 2018
Ali Hosseinpour, Leili Tafaghodi Khajavi
Silicon can be classified into three different grades based on its application or purity: metallurgical grade silicon (MG-Si) with purity of ~98%, solar grade silicon (SoG-Si) with purity of ~99.99999% and semiconductor grade silicon (SeG-Si) which has the purity of 99.9999999% (Braga et al. 2008; Johnston et al. 2012). SeG-Si is industrially produced via Siemens process which is an energy-intensive and complicated route. In this process, gaseous trichlorosilane (TCS) is produced in a reaction between Si and HCl. Next, TCS reacts with H2 gas and pure Si is deposited on Si seeds. This purification process is relatively slow and uses toxic and corrosive reagents (e.g. TCS). At present, most of SoG-Si is produced through Siemens or Siemens-like processes and a very small part of the production is via the processes dedicated to SoG-Si production. The difference in silicon specifications required in microelectronics and photovoltaic industry, and the cost and energy associated with the Siemens process have led to various investigations directed toward developing specific technologies for production of low-cost SoG-Si (Istratov et al. 2003; Mitrašinović et al. 2012; Wu et al. 2012; Wang et al. 2016).