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Modern Methodology of Electric System Design Using Rapid-Control Prototyping and Hardware-in-the-Loop
Published in Katalin Popovici, Pieter J. Mosterman, Real-Time Simulation Technologies, 2017
Jean Bélanger, Christian Dufour
Software-in-the-loop (SIL) represents the third logical step beyond the combination of RCP and HIL. With a sufficiently powerful simulator, both controller and plant can be simulated in real time on the same simulator. SIL has the advantage over RCP and HIL that no I/O are used, thereby preserving signal integrity. Also, since both the controller and plant models run on the same simulator, timing with the outside world is no longer critical. The execution time can now be slower or faster than real time with no impact on the validity of the results. SIL can, therefore, be used for a class of simulation called accelerated simulation. In accelerated mode, a simulation runs faster than real time, allowing for a large number of tests to be performed in a short period of time. For this reason, SIL is well suited for statistical testing such as Monte Carlo simulations. SIL does not have to be done in real time because no physical device is connected to the process but because Monte Carlo simulations are very time consuming, involving typically several thousand simulation runs, a real-time simulator will result in shorter completion time than offline simulation; the simulation runs slower than real time.
Terahertz Technology Based on Nanoelectronic Devices
Published in Iniewski Krzysztof, Integrated Microsystems, 2017
In a standard optical imaging system such as the use of a lens, the spatial resolution of an optical image is proportional to the wavelength of light. The solid immersion lens utilizes the fact that the wavelength in a material with a high dielectric constant is reduced compared to that in vacuum. Therefore, a lens with a large refractive index leads to high resolution.
Lock-in thermography for analyzing solar cells and failure analysis in other electronic components
Published in Quantitative InfraRed Thermography Journal, 2019
Otwin Breitenstein, Steffen Sturm
Since its introduction to integrated circuit (IC) failure analysis (FA) in 2000 [13], LIT has become a standard method also in this field. The success of LIT for IC FA relies on the fact that many faults in ICs, like internal shorts, latch-ups, faulty transistors or diodes, or other leakage currents, generate local heat. For these investigations generally mid-wave IR cameras are used, for which, even with the best available microscope objective lenses, the diffraction-limited spatial resolution is in the order of 5 µm. This resolution can be reduced down to about 1.5 µm by applying a solid immersion lens (SIL) [14]. Such an immersion lens is basically a hemispherical piece of silicon, positioned with its flat side on the flat surface of the IC. If there are local heat sources directly below the surface of the IC (the active layer of an IC is always directly below the surface), the space above the heat source is then filled by silicon instead of air. Since the refraction index of silicon is 3.5, the wavelength of the contributing thermal radiation (for an InSb camera about 5 µm in air) is reduced by this factor, leading to a correspondingly increased diffraction-limited spatial resolution. Optically, the SIL acts for the following microscope objective lens as a magnifying glass with a magnification factor of 3.5. Figure 9 shows such a SIL and LIT images (amplitude images superimposed to the topography images) of a local heat source in IC images without (b) and with SIL (c) [15]. The increased brightness in (c) in the edge region stems from the topography image. Here the inclined surface in this region reflects thermal radiation from the environment into the objective lens, whereas in the centre of the image the Narcissus effect dominates.